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Silicon Carbide (SiC) substrates are made from a very pure material that combines silicon and carbon. The production process starts with a high-temperature technique called Physical Vapor Transport (PVT). In this process, silicon and carbon powder turns into vapor and then cools down to form a large crystal called a boule.

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Silicon Carbide (SiC) substrates are made from a very pure material that combines silicon and carbon. The production process starts with a high-temperature technique called Physical Vapor Transport (PVT). In this process, silicon and carbon powder turns into vapor and then cools down to form a large crystal called a boule.

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Q: What are the lattice parameters of 6H-SiC?

A: 6H-SiC has a hexagonal crystal system with lattice constants of about 3.081 Å (a) and 15.117 Å (c). Its unique crystal structure gives it excellent physical and chemical properties, widely used in high-performance semiconductors.

 

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